Abstract
Abstract An estimate of refractive index change due to the free carriers in InAs1−xSbx alloy is performed. Band filling, bandgap renormalization and the free-carrier plasma effect are included in the theoretical model utilized. The dispersion of Δn near the bandgap edge is investigated for carrier densities of 1015–1018cm-3. The largest change in refractive index is obtained for InAs0.45Sb0.65.
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