Abstract
We investigated the transport properties of amorphous undoped and Ta-doped SnO2 thin films grown on unheated glass substrates by pulsed laser deposition. Optimized films exhibited a resistivity of 2 × 10−3 Ω cm, carrier density (ne) of (1–2) × 1020 cm−3, and were highly transparent in the visible region. Ta-doping had little effect on ne in amorphous films, in contrast to in crystalline phases. These results suggest that carrier electrons in amorphous SnO2 films originated from oxygen vacancies, similar to in In2O3-based amorphous films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
