Abstract
Cd0.3Te photodiodes at temperatures lower than 25 K. The freezeout was seen under the conditions that interband tunneling dominates the current in the photodiode and that avalanche ionization does not take place. These conditions are fulfilled at temperatures lower than 25 K and reverse bias voltages around 3 V. An acceptor level of about 4 meV was determined for p-type Hg0.7Cd0.3Te with NA-ND∼1016 cm-3 from the temperature dependence of the photodiode resistance governed by carrier freezeout. The difficulties in observation of carrier freezeout in Hg1-xCdxTe with a larger composition ratio x or higher doping concentration are discussed.
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