Carrier energy relaxation in In0.53Ga0.47As determined from picosecond luminescence studies

Abstract

We have measured the first infrared luminescence spectra of In0.53Ga0.47As with 10-ps time resolution. From the spectra we have obtained the carrier distribution functions at various delays for two different initial plasma densities. Our results provide a direct measurement of the carrier energy loss rate to the lattice, which we find to be about an order of magnitude slower than predicted from a simple model. We also find that the energy loss rate is surprisingly insensitive to carrier density at high densities.