Abstract
We investigate carrier localization effect and recombination dynamics of 530 nm InGaN green light-emitting diodes (LEDs) using temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) methods. Two distinct emission peaks located in low-energy and high-energy sides were observed in PL spectrum at 10 K by Gaussian fitting. Both temperature-dependent blue-shift and TRPL decay time decreasing with photon energy of the two peaks indicate the presence of two localized states. Formation of In rich clusters in the InGaN wells was clearly observed by atom probe tomography (APT). Finally, the electroluminescent spectrum points out that both peaks originate from radiative recombination of localized states.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
