Abstract
Surface plasmon mediated emission can improve the efficiency of light emitting diodes (LEDs) by coupling excited carriers to surface plasmon modes. By combining surface plasmon effects with photonic crystal patterning it is possible to enhance the internal quantum efficiency as well as the light extraction efficiency of blue and green InGaN LEDs. Time-resolved and time-integrated photoluminescence measurements are used to show that surface plasmons can enhance the radiative decay rate as well as the overall total luminescence for a properly designed sample. Our design for a practical, electrically injected InGaN surface plasmon LED will be presented.
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