Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faults

Abstract

AbstractWe have investigated the recombination dynamics of carriers in non‐polar GaN/AlGaN quantum wells intersected by basal plane stacking faults and an a ‐plane GaN template layer. In the GaN template, both the photoluminescence decay and rise times measured across the basal plane stacking fault emission band increase with decreasing emission energy. This is consistent with a carrier transfer process from less localised to more deeply localised states within the basal plane stacking fault. However, in the quantum well structures this behaviour is suppressed due to the restriction in carrier transport imposed by the quantum wells. We also found that the decay time of the localised exciton emission in the quantum wells is dominated by a non radiative carrier transfer process involving the basal plane stacking faults. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)