Abstract
We report on the time-resolved photoluminescence studies of step-like and linearly graded bandgap ZnCdxO (x = 0% – 60%) structures. The key carrier transport properties essential to the concept of variable bandgap absorbers are addressed, including radiative and nonradiative lifetime, diffusion and drift in the built-in field, and surface and interface recombination. A comprehensive set of depth-resolved recombination time parameters is presented revealing the individual roles of internal electric fields, built-in strain, and resultant polarization fields as well as of misfit strain at interfaces on the carrier dynamics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
