Abstract
We propose simple, analytical, approximations of carrier density for HgCdTe semiconductors that have non-parabolic energy bands and are highly degenerate. The proposed expressions are in the form similar to the classical Boltzmann's approximation without any adjustable parameter. These relations can be applied to HgCdTe for the case where electron densities are very high and the material is highly degenerate, e.g. highly accumulated surface due to passivant induced negative fixed charge density in n-HgCdTe photoconductor device. The expressions are valid in the LWIR and MWIR bands, and can be tuned further to apply to other bands.
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