Abstract
We propose a unified approximate analytical expression for the carrier density of HgCdTe semiconductors that have non-parabolic energy bands and are highly degenerate. The proposed expression is without any adjustable parameter. It can be applied to HgCdTe for the case where electron densities are very high and the material is strongly degenerate, e.g., a highly accumulated surface due to passivant-induced negative fixed charge density in an n-HgCdTe photoconductor device. The proposed expression is simultaneously valid for SWIR, MWIR and LWIR bands.
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