Carrier capture in InAs monolayer quantum wells grown on GaAs substrates

Abstract

In high quality InAs monolayer (ML)/GaAs heterostructures, InAs behaves as a luminescence centre. This centre exchanges carriers with the GaAs layer through trapping and detrapping. Temperature dependence of the ratio between the integrated photoluminescence (PL) intensity from the InAs and the GaAs layers reveals the competition between capture and release of carriers by the InAs layer. It is found that the thermal escape of the carriers in the InAs layer is the dominant quenching mechanism of the InAs PL peak at higher temperatures. A good agreement is obtained between the experiment and the proposed model.