Optical studies of the growth of single monolayer wide InAs quantum wells on GaAs by MBE

Abstract

We report here on photoluminescence (PL) and photoluminescence excitation (PLE) investigations into the direct growth by molecular beam epitaxy (MBE) of a single monolayer (ML) InAs quantum well (QW) having GaAs barriers on a GaAs substrate. Our growth temperature studies show that there is appreciable In desorption during the growth of single MLs of InAs in the temperature range 420 to 540°C. Investigation into surface segregation of In using a simple structure consisting of two coupled 1 ML wide InAs QWs reveal that this phenomenon is negligible at 420°C although significant at higher temperatures. We find that the optimum growth temperature for the growth of a 1 ML wide InAs QW is 420°C.