Abstract
We consider theoretically the problem of carrier capture and relaxation in quantum dots. We discuss the capture of electrons and holes into excited dot levels, assisted by the emission of one LO phonon, and consider the intra-dot relaxation due to Auger processes, which become possible when two or more carriers are trapped in the excited dot levels. Finally, we consider a system of rate equations for the population of the different dot levels which incorporate the phonon-assisted capture and the fast intra-dot Auger relaxation.
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