Abstract
Double exposure (DE) and double patterning (DP) have emerged as leading candidates to fill the technology gap between water immersion and EUV lithography. Various approaches of them are proposed to achieve 3x-nm half-pitch dense lines and beyond. Both DE with two resist processes and double patterning (DP) require two separate exposures, and they are faced very tight overlay margin by the scanner tool. By contrast, self-aligned double patterning (SADP) requires one exposure only, and provides high feasibility for 3x-nm node at this moment. However, a sequential order of multiple non-lithographic steps (film deposition, etch, and CMP) cause a complicated and expensive process of SADP. Instead of using complicated sacrificial layers, the spacers are directly formed at the sidewall of the resist patterns by low-temperature CVD deposition or spin on sidewall (SoS) material coating. In this paper, lower cost-of-ownership of SoS material are studied for SADP process.
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