Abstract
By using the JIPP T-IIU device the wall surface carbonization experiment was carried out with ECR discharge (2.45 GHz, 1.6 kW) in a gas mixture ( CH 4/H 2 = 50 50 , 1.5 × 10 −2 Pa ). The film is free from oxygen and metal. The mean deposition rate (on the first wall except special plane like limiter) can be predicted by simple measurement of CH 4 partial pressure. Wall heating (up to 300°C or more) and ion bombardment ( E > 100 eV) are effective to decrease the hydrogen concentration in the film.
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