Carbon-Based Three-Dimensional SRAM Cell with Minimum Inter-Layer Area Skew Considering Process imperfections

Jiachen Jiang,Zhigang Mao,Yanan Sun,Weifeng He,Volkan Kursun

doi:10.1109/asicon47005.2019.8983463

Carbon-Based Three-Dimensional SRAM Cell with Minimum Inter-Layer Area Skew Considering Process imperfections

Jiachen Jiang, Zhigang Mao + Show 3 more

https://doi.org/10.1109/asicon47005.2019.8983463

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Publication Date: Oct 1, 2019

Citations: 6

Affiliation: Shanghai Jiao Tong University, Hong Kong University of Science and Technology, University of Hong Kong

#Static Random-access Memory #Removal Of Metallic Carbon Nanotubes + Show 8 more

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Abstract

In this paper, a robust monolithic three-dimensional (M3D) 4N4P eight carbon nanotube MOSFETs (8-CN-MOSFET) static random-access memory (SRAM) cell is presented for achieving high integration density with tolerance to the removal of metallic carbon nanotubes. While maintaining the high functional yield and robust read/write operations, the layout area of the proposed 16K-bit M3D 4N4P 8-CN-MOSFET SRAM array is reduced by 45.32% and 31.56% as compared to the previously published 2D and M3D 6N2P 8-CN-MOSFET SRAM circuits, respectively.

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