Abstract
Infrared absorption experiments and ab initio computer simulations are used to study tin-carbon centers in silicon. Electron irradiation of C and Sn doped Si leads to prominent absorption lines at 873.5 and 1025 ${\mathrm{cm}}^{\ensuremath{-}1}.$ These are assigned to a carbon interstitial trapped by a substitutional Sn atom. The calculated modes are in good agreement with those observed. The calculations also suggest that a close-by pair of substitutional C and Sn will be a stable but electrically inert defect. This defect may account for the experimentally observed drop in the concentration of the ${\mathrm{C}}_{s}\ensuremath{-}{\mathrm{C}}_{i}$ defect after a room temperature annealing. Finally, we suggest Sn-C codoping of Si for manufacturing of radiation hard silicon.
Published Version
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