Carbon saturation of silicon target under the action of pulsed high-intensity ion beam

N E Aktaev,G E Remnev

doi:10.1088/1757-899x/110/1/012054

Abstract

The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.

Highlights

The investigation of influence of the pulsed high-intensity ion beams (PHIIB) on the various materials is of interest to many scientific groups [1,2,3,4,5,6]
The analyze will be performed by mean of the model taking into account the rapid heating, cooling-down of the target material and the high temperature gradient producing by the PHIIB
It can be concluded that the carbon saturation in the subsurface silicon layer occurs by means of the diffusion of carbon adsorbed on the silicon surface

Summary

Introduction

The investigation of influence of the pulsed high-intensity ion (carbon) beams (PHIIB) on the various materials is of interest to many scientific groups [1,2,3,4,5,6]. 1. Introduction The investigation of influence of the pulsed high-intensity ion (carbon) beams (PHIIB) on the various materials is of interest to many scientific groups [1,2,3,4,5,6]. By decreasing of the PHIIB energy current (lower than 107 W/cm2 [3]) it may be realized the short-pulsed implantation regime (SPIR) without surface melting. The rapid process leads to high temperature gradient which promotes the diffusion process from the surface into the depth the silicon simple.

Results

Conclusion