Abstract

A method to quantify the resolution of atomic force microscopy (AFM) probes using Fourier analysis of the AFM images is proposed. The maximum detectable spatial frequency obtained from the power spectrum was used to estimate the lateral resolution. Carbon nanotube tips were successfully used to study very dense arrays of semiconductor nanostructures. In particular, accurate measurements of shallow facet angles were obtained, which are in perfect agreement with results obtained by two complementary techniques - High Resolution Transmission Electron Microscopy and Reflection High-Energy Electron Diffraction.

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