Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

Abstract

The effect of ambient temperature on the detection sensitivity of carbon monoxide (CO) using ZnO nanorod-gated AlGaN/GaN high electron mobility transistor (HEMT) sensors was studied over a range of temperatures from 25 to 400 °C. An increase of the HEMT drain current was observed for exposure to the CO-containing ambients, due to chemisorbed oxygen on the ZnO surface reacting with CO to form CO2 and releasing electrons to the oxide surface, increasing the counter charges in the two-dimensional electron gas channel of the HEMT. By increasing the detection temperature from 25 °C to 150 °C, the CO detection sensitivity, ΔI/I, and detection limit were significantly improved from 0.23% to 7.5% and from 100 ppm to ∼30 ppm, respectively. However, the sensitivity of the CO detection was degraded by the decrease of mobility and saturation drain current of HEMT at temperatures higher than 200 °C.