Carbon-Hydrogen Complexes in <i>n</i>- and <i>p</i>-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy

Abstract

A deep level transient spectroscopy (DLTS) study on n- and p-type diluted Si1-xGex alloys (x=0, 0.011, 0.026, 0.046, and 0.070) is presented. Defect levels of several carbon-hydrogen (CH) complexes are observed. The high-resolution Laplace-DLTS technique allows us to detect configurations of defects which contain different numbers of Ge atoms in the first and second-nearest neighbourhood of the CH complexes. The electrical properties of the defects will be analysed and their origin will be discussed.