Abstract
Carbon doping in III–V compounds has generated much attention because of applications in high temperature and high current devices. We present results using a novel electron beam carbon source for doping GaAs and GaSb. The source construction allows normal effusion cell geometry and utilizes electron bombardment for evaporation from a carbon rod. Mass spectrometer data showed the carbon flux contained C1, C2, and C3 species. For GaAs, controllable hole doping densities between 3×1015 cm−3 and 5×1019 cm−3 were obtained. For GaSb, carbon doping resulted in P-type material with hole densities ranging from the background level of 2×1016 to 3×1020 cm−3 for specular film morphology. Hole mobility values for GaAs and GaSb are comparable to published data.
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