Carbon-doped high-mobility hole gases on (0 0 1) and (1 1 0) GaAs

Abstract

Since Stormer and Tsang have introduced the first two-dimensional hole gas (2DHG) in the GaAs/AlGaAs heterosystem, the choice of suitable dopants was limited to beryllium and silicon over the last 20 years. Both acceptor atoms have significant disadvantages, i.e. either high-diffusion rates or a limitation to specific growth directions. Utilizing a carbon filament-doping source, we prepared high-quality 2DHGs in the (0 0 1) and the nonpolar (1 1 0) crystal plane with carrier mobilies beyond 10 6 cm 2/Vs in quantum well and single interface structures. Low-temperature magnetoresistance measurements recover a large number of fractional QHE states and show a pronounced beating pattern from which the Rashba induced spin-splitting has been determined. In addition, 2DHGs have been grown on cleaved edges of (1 1 0) and (0 0 1) wafers with transport features in qualitative agreement to our findings on (1 1 0) substrates.