Abstract
(CH3NH3)3Bi2I9 perovskites have attracted enormous attention due to their lower toxic and more stable nature than CH3NH3PbI3 counterparts. However, higher bandgap and lower carrier mobility hinder the application of (CH3NH3)3Bi2I9 in optoelectronics. Hence, we employed carbon doping of Co3O4 hole extractors to reduce the bandgap of (CH3NH3)3Bi2I9, minimize non – radiative recombination rate and improve surface morphology of the (CH3NH3)3Bi2I9 particles. Consequently, photodetectors based on carbon-doped Co3O4 display reduced internal resistance, high photocurrent and low dark current values. The fabricated photodetectors display high responsivity (1.56 × 106 μA/W), high detectivity (5.74 × 1012 Jones), high sensitivity (8.23 × 103) and fast optical switching times (< 10 ms) values under device testing conditions of 2.0 V bias voltage, 10 mW/cm2 power intensity of solar illumination and ambient room conditions. The linearity and stability of the photodetectors over wide range of light intensities and 100 optical switching cycles were also demonstrated respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
