Carbon contacted nanotube field effect transistors

Abstract

The authors demonstrate that multiwalled carbon nanotube forests make exceptionally good source and drain contacts for single walled carbon nanotube field effect transistors. Fabrication is straightforward, involving only a single step of photolithography, followed by chemical vapor deposition. Bridging nanotubes are identified either by conventional scanning electron microscopy or by global photoluminescence imaging using only white light illumination. Gate voltage sweeps show that these devices are similar to conventional nanotube transistors but with surprisingly high on currents from the viewpoint of simple models of the contact-channel interface.