Abstract
Anodic layers of TiO 2 were made with a potentiostatic setting and voltages from 1 to 90 V in 1 N sulphuric acid. The current-applied voltage characteristics of the structures Ti/TiO 2/Au and Ti/TiO 2/electrolyte are compared and analysed with the Schottky mechanism. The barrier heights calculated for the rectifying interfaces TiO 2-Au and TiO 2-electrolyte are respectively 1.2±0.1 eV and 0.88±0.05 eV. Three domains of voltage were distinguished for the anodic oxidation of titanium in the potentiostatic mode as follows: from 1 to 10 V corresponding to a natural oxide thin layer and the beginning of anodic oxidation; from 10 to 90 V corresponding to oxidation with electronic breakdown; beyond 90 V relating to oxidation accompanied by thermal breakdown.
Published Version
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