Abstract
2014 Thermal capacitive spectroscopy (DLTS, conductance) have been performed on n type Gallium Arsenide Schottky barrier structures irradiated at 300 K and 77 K with one hundred keV protons at dose of some 1011 p+/cm2. At 300 K, the defects created are the electron traps E2, E3, E4, E5 found after electron irradiation. Another defect (Ec 0.3 eV, 03C3na = 3 x 10-14 cm2) is found at moderate dose. At 77 K, a new electron trap (Ec 0.26 eV, 03C3na = 9 x 10-13 cm2) which anneals between 200 K and 300 K is detected. The E2 and E3 defects are also created after a low temperature irradiation. Preliminary results concerning the variations of these traps after the thermal annealing stages between 200 K and 300 K are described. We have also applied the new method of DLOS (Deep Level Optical Spectroscopy) to the determination of the optical capture cross section 03C30n(hv) of E3 which allowed us to precise the lattice relaxation effect of this centre. Revue Phys. Appl. 15 (1980) 679-686 MARS 1980, , Classification Physics Ahstracts 61.80Jh 71.55 78.50Ge
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