Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K

Abstract

Thermal capacitive spectroscopy (DLTS, conductance) measurements have been performed on N-type GaAs Schottky barriers irradiated at 300 K and 77 K with one hundred keV protons at dose of some 1011 p+/cm2. At 300 K, the electron traps E2, E3, E4, E5, found also after electron irradiation, are created together with another trap (Ec−0.3 eV, σna = 3.10−14 cm2). At 77 K, the E2 and E3 defects are also created together with a new electron trap (EC-0.26 eV, σna = 9.10−13 cm2) which anneals between 200 K and 300 K. We have also applied the new method DLOS (Deep Level Optical Spectroscopy) to the determination of the optical capture cross-section σ n o (hη) of E3 to determine the lattice relaxation effect of this centre.