Capture cross sections of the gold donor and acceptor states in n-type Czochralski silicon

Abstract

The hole and electron capture cross sections of the gold donor and acceptor have been measured directly in n-type silicon. The samples have been grown by the Czochralski technique and have originated from several different suppliers. They have been diffused with gold so that N T ≲ 0.1 ( N D - N A ). Measurements have been made on both Schottky diodes and diffused junctions and similar results obtained from all samples. The electron cross section of the acceptor level was found to be (0.85±0.2) × 10 −16 cm 2 and the hole cross section of the donor (3.5±0.8) × 10 −15 cm 2, both were essentially temperature independent. The hole cross section of the acceptor was (0.9±0.2) × 10 −14 cm 2 at 300 K and showed a T −1.3 temperature dependence. The electron cross section of the donor was (0.9±0.2) × 10 −15 cm 2 at 180 K with a T −2 dependence.