Abstract
The evolution of the capture cross section of the Si-SiO2 interface states is analyzed when metal-oxide-semiconductor capacitors are stressed by Fowler–Nordheim injection of electrons from the n-type substrate. The capture cross sections of the energy distribution of the states are measured by a trap filling method using deep level transient spectroscopy. We found that the capture cross sections of near-midgap states increase by a factor 10, while they remain unchanged for the states localized near the conduction-band edge. The capture cross sections are temperature dependent and their associated activation energies increase with the stress from 30 to 100 meV. The exponential prefactor in the temperature-dependence law of the capture cross section is increased from 10−16 to 10−14 cm2 , and we suggest that the Fowler–Nordheim degradation induces new interface states of donor type in the upper part of the silicon band gap.
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