Abstract
The device performances of an amorphous indium gallium zinc oxide transparent thin-film transistor (a-IGZO TFT) were improved by using a Ti-doped GaZnO (GTZO) as the channel capping layer in this study. The GTZO thin film exhibited a high carrier concentration of $\text{1.5} \times \text{10} ^{21} \text{cm} ^{- 3}$ and served as both a carrier supplement and passivation layer for reducing the absorption of oxygen and moisture as well as the back-channel charge trapping in the composite-channel TFT. An enhanced carrier mobility with high electron concentration in the composite GTZO/IGZO heterostructure was verified in the Hall measurement. The GTZO/IGZO composite-channel TFT was demonstrated to show an improved carrier mobility of 15.5 cm2/V-s, subthreshold swing of 0.35 V/decade, off current of $1.4 \times 10^{- 11}$ A, threshold voltage of 1.4 V, and on/off current ratio of $1.2 \times 10 ^{7}$ . Stable operation with unchanged device characteristics was observed following a bias-stress test. Thus, the fabricated GTZO/IGZO TFTs exhibited advantageous device performance and improved device operation stability.
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