Abstract
Based on numerical TCAD simulations, the novel capacitor-less A-RAM memory cell is detailed in terms of electrostatic effects, transient operation and retention time. The particular double-body device architecture on SOI is beneficial for better scalability than conventional 1T-DRAMs. Its dual body partitioning suppresses the supercoupling effect in SOI; the two types of carriers can coexist inside ultrathin fully depleted transistors. Electrons and holes are accommodated in different bodies, separated by an insulator layer, but remain electrostatically coupled. A-RAM features easy discrimination of ‘0’ and ‘1’ states, simple control waveforms and very promising performance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
