Capacitive RF MEMS switch dielectric charging and reliability: a critical review with recommendations

Abstract

This paper presents a comprehensive review of the reliability issues hampering capacitive RF MEMS switches in their development toward commercialization. Dielectric charging and its effects on device behavior are extensively addressed, as well as the application of different dielectric materials, improvements in the mechanical design and the use of advanced actuation waveforms. It is concluded that viable capacitive RF MEMS switches with a great chance of market acceptance preferably have no actuation voltage across a dielectric at all, contrary to the ‘standard’ geometry. This is substantiated by the reliability data of a number of dielectric-less MEMS switch designs. However, a dielectric can be used for the signal itself, resulting in a higher Con/Coff ratio than that one would be able to achieve in a switch without any dielectric. The other reliability issues of these devices are also covered, such as creep, RF-power-related failures and packaging reliability. This paper concludes with a recipe for a conceptual ‘ideal’ switch from a reliability point of view, based on the lessons learned.