Abstract
Reliability issues currently hamper the commercialization of capacitive RF MEMS switches. The most important failure mode is parasitic charging of the dielectric of such devices. In this paper we present an improved analytical model that enables us to calculate and understand the effect of insulator charging on the behavior of capacitive RF MEMS switches, and to describe the way they fail, and their reliability. Emphasis is placed on a shift of the pull-out voltage to predict failures. Tests with capacitive RF MEMS switches have been performed that validate the most important features of the model.
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