Abstract
A graphene-based capacitive NO2 sensing device was developed by utilizing the quantum capacitance effect. We have used a graphene field-effect transistor (G-FET) device whose geometrical capacitance is enhanced by incorporating an aluminum back-gate electrode with a naturally oxidized aluminum surface as an insulating layer. When the graphene, the top-side of the device, is exposed to NO2, the quantum capacitance of graphene and, thus, the measured capacitance of the device, changed in accordance with NO2 concentrations ranging from 1-100 parts per million (ppm). The operational principle of the proposed system is also explained with the changes in gate voltage-dependent capacitance of the G-FET exposed to various concentrations of NO2. Further analyses regarding carrier density changes and potential variances under various concentrations of NO2 are also presented to strengthen the argument. The results demonstrate the feasibility of capacitive NO2 sensing using graphene and the operational principle of capacitive NO2 sensing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
