Abstract
Thermal capacitance transient spectroscopy and capacitances Voltage measurements on Au-Schottky diodes (φb 0.66eV at 100K) have been used to detect and study the deep energy levels in n-type VPE GaAs. A reinterpretation of equations utilized in deep level transient spectroscopy has been presented to characterize levels with long time constants. It is shown that only an initial portion (and not the full capacitance transients on diodes) is sufficient to obtain the activation energy, capture cross section and density of the level. The proposed method will save the measurement time and cost as demonstrated for the commonly observed 0.83eV electron level in n-type VPE-GaAs. This level turned out to be non-radiative in photoluminescence measurements which show that for GaAs: dEs/dT -4.1 10-4 Ve/K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
