Capacitance transient studies of electron irradiated 4H-SiC

Abstract

Deep level defects in electron-irradiated 4H-SiC epilayers grown by chemical vapor deposition (CVD) were studied using deep level transient spectroscopy (DLTS). DLTS measurements performed on electron-irradiated p + n junctions in the temperature range 100–7.50 K have revealed seven electron traps. Most of these defects were already observed at a dose of irradiation as low as 5 × 10 13 cm −2. Dose dependence and annealing behaviour of the defects were investigated. For two of these electron traps, the capture cross section was measured.