Capacitance transient spectra of processing- and radiation-induced defects in silicon solar cells

Abstract

Capacitance transient spectroscopy is used to study defects in chips of fully fabricated silicon solar cells. Characteristic differences are observed as a function of the crystal growth type (crucible grown or float zoned) and dopant (boron or aluminum) of the starting material, processing variables (diffused or implanted junctions, electron beam or furnace annealing) and radiation environment (1 MeV electron irradiation).