Luminescence radiation spectroscopy of silicon solar cells

Abstract

At present there are known many of diagnostic methods of detection large crystal lattice defects of silicon solar cells. This paper deals about results of new potential in to use one of characteristics luminescence radiation for detection defects of solar cells. So polarization spectroscopy of defect in solar cells may be used to fitting characterization of silicon solar cells. And this can lead to understand the electrical properties of defects in silicon solar cells and study of really formation defects. We used extending existing electroluminescence technology about polarization spectroscopy to yield the polarization of luminescence radiation by defect in solar cells. Radiation emitted by the solar cell has a wave character that can interact with the silicon structures or hypothetically thin reflectance layer of solar cells. In our research we can observed the linear partially polarization luminescence light on poly-silicon crack defect. Spectral response of using CCD camera is approximately 300 to 1100 nm. Sinusoid dependence of luminescence intensity on the angle of linear polarization analyzer rotation shown this fact. The degree of polarization depends on the material, in this case the character of defect. Polarized light can be obtained in various ways. This fact opens up for potential next new questions in this widely course of study diagnostics defects silicon solar cells.