Abstract
In Au n-type Si Schottky diodes heavily doped with copper, a remarkable decrease in the depletion layer capacitance is frequently observed by applying stress. It was found that the capacitance decrease due to stress was attributed to the change of the copper substitutional species (CuI) dissolved in silicon into other different copper-associated species (CuII) in accordance with a stress level. Since the capacitance decrease due to stress becomes conspicuous, too, as the signal frequency of measurement is increased, we can expect an application as a stress-sensitive capacitor.
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