Abstract
We have carried out room temperature investigation of growth-dependent capacitance-frequency characteristics in InN thin films grown by rf magnetron sputtering on semi-insulating GaAs substrates. A negative capacitance (NC) effect has been observed in these InN thin films. Based on a barrier free model for the InN thin films and a transient current model of charging-discharging and inertial conductance for the InN/GaAs interface states, we attribute the NC effect to the carrier capture and emission at the InN/GaAs interface states, by aid of a comparative study on an InN thin film on sapphire substrate. We have demonstrated the dependence of the NC effect on the growth temperature and the sputtering pressure as well as the bias. The observed NC phenomenon provides experimental evidence for high-speed device applications of InN.
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