Abstract
A new microelectromechanical systems (MEMS) probe card made of electroplated nickel cantilevers, which has compliant structure, with through-wafer interconnections for IC testing is developed. The measured contact resistance was less than 0.5 ohm and leakage current was approximately 0.13 nA between tips and pads. In addition, planarity of tips and the alignment of x- and y-axes were satisfied with conventional needle probe card performance. Therefore, this probe card is suitable for wafer-level burn-in testing and function testing of memory and RF devices. In particular, since through-wafer interconnection can offer the shortest signal line path and reduce signal delay, it is possible to implement fine pitch and high-speed devices. The probe was fabricated with the 4-inch silicon substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
