Abstract
Magnetotransport measurements have been performed on ultrathin Bi films grown on GaAs(110). While large positive magnetoresistance is observed at low temperatures, the Hall resistance is found to be extremely small. This is explained by the cancellation of contributions of electrons and holes, which are estimated to have close density and mobility values. By analogy with graphene near the charge neutral point, magnetotransport properties are discussed in relation to the formation of Dirac cones.
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