Abstract
A simplified approach to compare quantitatively the contributions of electrons and holes to the total collected charge in heavily irradiated Si pad detectors and strip/pixel detectors has been carried out in this study. By applying a step function to approximate the weighting field and a step function to approximate the linear- and/or double junction-electric field, in the detector, one can obtain analytical solutions of total collected charge and contributions from electrons and hole for irradiated Si detectors with various electric field and weighting field profiles. Although the results do not exactly replicate the situation in a real detector, they qualitatively and quantitatively explain the contributions of electrons and holes in various detectors with different segmentation- and field-profiles.
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