Can the dual property of noise representation be recovered within generalized field methods?

Abstract

In the framework of the Green-function formalism, the generalized impedance and admittance field methods for the calculation of the spectral density of voltage and current fluctuations of semiconductor devices are introduced. It is shown that this scheme can be realized when noise sources corresponding to Langevin forces are included into the equations describing medium properties. The unifying concept of the formalism evidences the same physical ground of both the admittance and impedance field methods when instantaneous fluctuations of carrier accelerations during scattering events are taken as primitive noise sources. The dual property of the noise representation is thus recovered.