Abstract
In the framework of the Green-function formalism the admittance field method is proposed for the calculation of the spectral density of current fluctuations of two and more terminal devices. The usefulness of the theory is illustrated by hydrodynamic calculations performed for a submicron GaAs structure. The unifying property of the formalism evidences the same physical ground of both the admittance and impedance field methods when instantaneous fluctuations of carrier accelerations during scattering events are taken as noise sources.
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