Abstract
This paper compares on-wafer thru-reflect-line (TRL) and off-wafer short-open-load-thru (SOLT) and line-reflect-reflect-match (LRRM) vector-network-analyzer probe-tip calibrations for amplifier characterization and parasitic-extraction calibrations for transistor characterization on silicon integrated circuits at millimeter-wave frequencies. We show that on-wafer calibrations generally outperform off-wafer and LRRM probe-tip calibrations at millimeter-wave frequencies. However, certain parasitic-extraction algorithms designed specifically to remove contact pads, transmission-lines, and access vias correct for much of the error in off-wafer calibrations.
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