Abstract
The in-plane Mg doping distribution in molecular beam epitaxy grown MgxZn1−xO/ZnO heterostructures is mapped by low-temperature photoluminescence measurements in an effort to evaluate and control the resultant inhomogeneity formed during the growth process. In an unrotated sample, the independent configuration effects of the O3 and Mg source cells are clearly demonstrated in a composition spread due to flux gradients, while this inhomogeneity is suppressed by sample rotation during the growth. The present mapping results provide an important means for investigating improved doping regimes with the aim of enhancing the quality of quantum transport observable at the MgxZn1−xO/ZnO heterointerface.
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