Calculations of microwave and millimeterwave response characteristics of the two-dimensional hot electron gas in In0.53Ga0.47As quantum wells

Abstract

The small-signal mobility of the two-dimensional degenerate hot electrons in a square quantum well of In0.53Ga0.47As is calculated in the microwave and millimeterwave regime. The carrier energy loss via polar optic phonons and momentum losses through deformation potential acoustic, background ionized impurity, and alloy disorder scatterings are considered. The ac mobility is found constant up to about 100 GHz while the alternating current lags behind the applied field above about 10 GHz. The ac mobility and the phase lag increase with the rise of both the channel width and the 2D carrier concentration. The 3dB cutoff frequency decreases with increasing width of the channel and is larger for higher bias fields. The cutoff frequency is higher for 300 than for 77 K over the range of the channel widths and the dc bias fields studied here.