Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells

Abstract

We present the band structure and photoluminescence spectra calculations of h-AlGaN/GaN multiple quantum wells and superlattices. The calculations are performed within a self-consistent approach to the k → · p → theory by means of the resolution of a full eight-band Kane Hamiltonian together with Poisson equation for the carriers charge density. Exchange-correlation effects are included within the local density approximation. These are found to play a important role in the correct determination of band structures and potential profiles. In our calculations, electric fields, strain effects and split-off hole band are taken into account. Theoretical PL spectra of the systems are shown. Similar calculations to c-AlGaN/GaN MQWs and SLs were done for comparison.